- Product Model TP65H050G4YS
- Brand Transphorm
- RoHS Yes
- Description 650 V 35 A GAN FET HIGH VOLTAGE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1902
- 1 14.36
- 10 12.65
- 450 9.91
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
- Power Dissipation (Max) 132W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
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