- Product Model CGD65A055S2-T07
- Brand Cambridge GaN Devices
- RoHS Yes
- Description 650V GAN HEMT, 55MOHM, DFN8X8. W
- Classification Single FETs, MOSFETs
-
PDF
- 1000 9.54
Technical Details
- Package / Case 16-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 27A (Tc)
- Rds On (Max) @ Id, Vgs 77mOhm @ 2.2A, 12V
- FET Feature Current Sensing
- Vgs(th) (Max) @ Id 4.2V @ 10mA
- Supplier Device Package 16-DFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Vgs (Max) +20V, -1V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 6 nC @ 12 V
Related Products
GAN
Inventory: 0
650V GAN HEMT, 130MOHM, DFN8X8.
Inventory: 3352
650V GAN HEMT, 130MOHM, DFN5X6.
Inventory: 4885
650V GAN HEMT, 200MOHM, DFN5X6.
Inventory: 4355
TRANS GAN BUMPED DIE
Inventory: 12647
650 V, 80 MOHM GALLIUM NITRIDE (
Inventory: 1985
GANFET N-CH 650V 30A DFN8X8
Inventory: 100
GANFET N-CH
Inventory: 2923
650 V 25 A GAN FET
Inventory: 1630
