- Product Model IGT60R070D1ATMA4
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description GANFET N-CH
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 4423
Pricing:
- 2000 7.7
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31A (Tc)
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 1.6V @ 2.6mA
- Supplier Device Package PG-HSOF-8-3
- Vgs (Max) -10V
- Drain to Source Voltage (Vdss) 600 V
- Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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