- Product Model TP65H070G4PS
- Brand Transphorm
- RoHS Yes
- Description GANFET N-CH 650V 29A TO220
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2576
- 1 8.65
- 50 6.91
- 100 6.18
- 500 5.45
- 1000 4.91
- 2000 4.6
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 18A, 10V
- Power Dissipation (Max) 96W (Tc)
- Vgs(th) (Max) @ Id 4.7V @ 700µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 638 pF @ 400 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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