- Product Model TP65H035G4WS
- Brand Transphorm
- RoHS No
- Description GANFET N-CH 650V 46.5A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 17.94
- 30 14.53
- 120 13.67
- 510 12.39
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C
- Technology GaNFET (Cascode Gallium Nitride FET)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
- Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
- Power Dissipation (Max) 156W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 1mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 0 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
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