- Product Model TP65H150G4PS
- Brand Transphorm
- RoHS Yes
- Description GAN FET N-CH 650V TO-220
- Classification Single FETs, MOSFETs
-
PDF
- 1 6.61
- 50 5.28
- 100 4.72
- 500 4.17
- 1000 3.75
- 2000 3.51
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 500µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
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