Technical Details

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 29A (Tc)
• Rds On (Max) @ Id, Vgs 80mOhm @ 8A, 6V
• Power Dissipation (Max) 240W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 30.7mA
• Supplier Device Package DFN8080-8
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7V, -6V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 400 V