- Product Model GAN190-650EBEZ
- Brand Nexperia
- RoHS Yes
- Description 650 V, 190 MOHM GALLIUM NITRIDE
- Classification Single FETs, MOSFETs
-
PDF
- 2500 1.49
- 5000 1.43
Technical Details
- Package / Case 8-VDFN Exposed Pad
- Mounting Type Surface Mount, Wettable Flank
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 12.2mA
- Supplier Device Package DFN8080-8
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7V, -1.4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
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