- Product Model GAN3R2-100CBEAZ
- Brand Nexperia
- RoHS Yes
- Description 100 V, 3.2 MOHM GALLIUM NITRIDE
- Classification Single FETs, MOSFETs
-
PDF
- 1500 1.84
- 3000 1.73
Technical Details
- Package / Case 8-XFBGA, WLCSP
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A
- Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
- Power Dissipation (Max) 394W
- Vgs(th) (Max) @ Id 2.5V @ 9mA
- Supplier Device Package 8-WLCSP (3.5x2.13)
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
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