- Product Model GAN7R0-150LBEZ
- Brand Nexperia
- RoHS Yes
- Description 150 V, 7 MOHM GALLIUM NITRIDE (G
- Classification Single FETs, MOSFETs
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Inventory:5557
Pricing:
- 2500 1.3
- 5000 1.25
Technical Details
- Package / Case 3-VLGA
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 28A
- Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
- Power Dissipation (Max) 28W
- Vgs(th) (Max) @ Id 2.1V @ 5mA
- Supplier Device Package 3-FCLGA (3.2x2.2)
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V