Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 48A (Ta)
• Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 9mA
• Supplier Device Package Die
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 75 V