- Product Model EPC2059
- Brand EPC
- RoHS Yes
- Description TRANS GAN 170V DIE .009OHM
- Classification Single FETs, MOSFETs
-
PDF
- 2500 1.62
- 5000 1.55
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 24A (Ta)
- Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 3mA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 170 V
- Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 85 V
Related Products
MOSFET P-CH 50V 130MA SOT323
Inventory: 407067
GANFET N-CH 150V 48A DIE
Inventory: 5655
GANFET N-CH 40V 29A DIE
Inventory: 34495
TRANS GAN 100V .0032OHM BMP DIE
Inventory: 1578
TRANS GAN 100V DIE 5.6MOHM
Inventory: 2698
TRANS GAN 200V DIE .022OHM
Inventory: 29056
TRANS GAN 150V .003OHM 3X5MM QFN
Inventory: 1100
TRANS GAN 150V .006OHM 3X5PQFN
Inventory: 51406
