Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 39A
• Rds On (Max) @ Id, Vgs 85mOhm @ 20A, 18V
• Power Dissipation (Max) 223W (Tc)
• Vgs(th) (Max) @ Id 3.6V @ 5mA
• Supplier Device Package TO-247-4
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +22V, -8V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 1000 V