- Product Model IMZA120R040M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC DISCRETE
- Classification Single FETs, MOSFETs
-
PDF
- 1 18.31
- 30 14.83
- 120 13.95
- 510 12.64
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Rds On (Max) @ Id, Vgs 54.4mOhm @ 19.3A, 18V
- Power Dissipation (Max) 227W (Tc)
- Vgs(th) (Max) @ Id 5.2V @ 8.3mA
- Supplier Device Package PG-TO247-4-8
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 51 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 800 V
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