Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 225A (Tc)
• Rds On (Max) @ Id, Vgs 9.9mOhm @ 108A, 18V
• Power Dissipation (Max) 750W (Tc)
• Vgs(th) (Max) @ Id 5.2V @ 47mA
• Supplier Device Package PG-TO247-4-8
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +20V, -5V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 289 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 9170 pF @ 800 V