Inventory:1527
Pricing:
  • 1 19.68
  • 30 15.93
  • 120 15
  • 510 13.59

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 40A (Tc)
  • Rds On (Max) @ Id, Vgs 97.5mOhm @ 20A, 15V
  • Power Dissipation (Max) 235W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 5mA
  • Supplier Device Package TO-247-4
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 47.6 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 1000 V
  • Qualification AEC-Q101

Related Products


1200V COOLSIC MOSFET PG-TO247-3

Inventory: 172

SIC MOSFET BVDSS: >1000V TO247-4

Inventory: 50

SIC, MOSFET, 40M, 1200V, TO-247-

Inventory: 316

SIC MOSFET 1200V 40M TO-247-3L

Inventory: 61

N-CHANNEL MOSFET,TO-247-4

Inventory: 338

1200V/30MOHM SIC STACKED FAST CA

Inventory: 1372

Top