Inventory:1806
Pricing:
  • 1 8.88
  • 10 7.61
  • 360 5.97
  • 720 5.6
  • 1080 5.04

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 3A
  • Rds On (Max) @ Id, Vgs 1.32Ohm @ 1.5A, 20V
  • Power Dissipation (Max) 69W
  • Vgs(th) (Max) @ Id 4.5V @ 1mA
  • Supplier Device Package TO-247AB
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
  • Vgs (Max) +25V, -5V
  • Drain to Source Voltage (Vdss) 1700 V
  • Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 1000 V

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