Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 16A
• Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 6V
• Power Dissipation (Max) 125W
• Vgs(th) (Max) @ Id 2.3V @ 5mA
• Supplier Device Package 8-DFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) 6V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 203 pF @ 400 V