- Product Model EPC2050
- Brand EPC
- RoHS Yes
- Description TRANS GAN BUMPED DIE
- Classification Single FETs, MOSFETs
-
PDF
- 2500 2.73
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)
- Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 350 V
- Gate Charge (Qg) (Max) @ Vgs 4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 628 pF @ 280 V
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