- Product Model GAN063-650WSAQ
- Brand Nexperia
- RoHS Yes
- Description GANFET N-CH 650V 34.5A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 20.41
- 30 16.92
- 120 15.87
- 510 13.54
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology GaNFET (Cascode Gallium Nitride FET)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34.5A (Ta)
- Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
- Power Dissipation (Max) 143W (Ta)
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
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