- Product Model IGLD60R190D1SAUMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description GAN HV PG-LSON-8
- Classification Single FETs, MOSFETs
- 3000 2.83
Technical Details
- Package / Case 8-LDFN Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Power Dissipation (Max) 62.5W (Tc)
- Vgs(th) (Max) @ Id 1.6V @ 960µA
- Supplier Device Package PG-LSON-8-1
- Vgs (Max) -10V
- Drain to Source Voltage (Vdss) 600 V
- Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
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