- Product Model IRFBE30PBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 800V 4.1A TO220AB
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.16
- 50 1.74
- 100 1.43
- 500 1.21
- 1000 1.03
- 2000 0.97
- 5000 0.94
- 10000 0.91
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
- Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
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