- Product Model IRFBG30PBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 1000V 3.1A TO220AB
- Classification Single FETs, MOSFETs
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Inventory:6470
Pricing:
- 1 2.46
- 50 1.98
- 100 1.63
- 500 1.38
- 1000 1.17
- 2000 1.11
- 5000 1.07
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
- Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 1000 V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V