- Product Model IRFD110PBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 100V 1A 4DIP
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.62
- 10 1.33
- 100 1.03
- 500 0.87
- 1000 0.71
- 2000 0.67
- 5000 0.64
- 10000 0.61
Technical Details
- Package / Case 4-DIP (0.300", 7.62mm)
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1A (Ta)
- Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
- Power Dissipation (Max) 1.3W (Ta)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 4-HVMDIP
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
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