Inventory:54781
Pricing:
  • 1 1.51
  • 10 1.25
  • 100 1
  • 500 0.84
  • 1000 0.72
  • 2000 0.68
  • 5000 0.65
  • 10000 0.63

Technical Details

  • Package / Case 4-DIP (0.300", 7.62mm)
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type P-Channel
  • Current - Continuous Drain (Id) @ 25°C 1A (Ta)
  • Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
  • Power Dissipation (Max) 1.3W (Ta)
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Supplier Device Package 4-HVMDIP
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 100 V
  • Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V

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