- Product Model G630J
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V, 9A,RD<0.28@10V,VTH1.0V~3.
- Classification Single FETs, MOSFETs
-
PDF
Technical Details
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-251
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 25 V
Related Products
N200V, 18A,RD<0.19@10V,VTH1.0V~3
Inventory: 75
MOSFET N-CH 200V 18A TO-220F
Inventory: 50000
N200V, 18A,RD<0.16@10V,VTH1V~3V,
Inventory: 0
N200V,RD(MAX)<250M@10V,RD(MAX)<3
Inventory: 87
MOSFET N-CH 700V 12.5A TO251-3
Inventory: 2881
MOSFET N-CH 250V 8A IPAK
Inventory: 5836
