- Product Model 18N20J
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V, 18A,RD<0.16@10V,VTH1V~3V,
- Classification Single FETs, MOSFETs
Inventory:1500
Pricing:
- 1 0.93
- 75 0.75
- 150 0.59
- 525 0.5
- 1050 0.41
- 2025 0.39
- 5025 0.37
- 10050 0.35
Technical Details
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
- Power Dissipation (Max) 65.8W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-251
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 25 V
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