- Product Model 630AT
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V,RD(MAX)<250M@10V,RD(MAX)<3
- Classification Single FETs, MOSFETs
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Inventory:1587
Pricing:
- 1 0.94
- 10 0.82
- 100 0.57
- 500 0.47
- 1000 0.4
- 2000 0.36
- 5000 0.34
- 10000 0.31
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 25 V
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