- Product Model 18N20F
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V, 18A,RD<0.19@10V,VTH1.0V~3
- Classification Single FETs, MOSFETs
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Inventory:1575
Pricing:
- 1 1.17
- 50 0.94
- 100 0.74
- 500 0.63
- 1000 0.51
- 2000 0.48
- 5000 0.46
- 10000 0.44
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
- Power Dissipation (Max) 110W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-220F
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 836 pF @ 25 V
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