Inventory:3830
Pricing:
  • 800 13.7

Technical Details

  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 106A (Tc)
  • Rds On (Max) @ Id, Vgs 28.5mOhm @ 45A, 18V
  • Power Dissipation (Max) 395W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 15.5mA
  • Supplier Device Package D2PAK-7
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +22V, -8V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 164 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 325 V

Related Products


SICFET N-CH 650V 238A TO263-7

Inventory: 460

SILICON CARBIDE MOSFET, NCHANNEL

Inventory: 1218

SILICON CARBIDE (SIC) MOSFET - 4

Inventory: 735

SILICON CARBIDE (SIC) MOSFET - 1

Inventory: 269

SILICON CARBIDE (SIC) MOSFET - 5

Inventory: 510

SIC MOS D2PAK-7L 650V

Inventory: 800

SIC MOS D2PAK-7L 650V

Inventory: 2365

SICFET N-CH 650V 90A H2PAK-7

Inventory: 66

SILICON CARBIDE POWER MOSFET 650

Inventory: 8

750V/9MOHM, N-OFF SIC STACK CASC

Inventory: 1328

Top