- Product Model NTBG060N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET - 4
- Classification Single FETs, MOSFETs
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Inventory:2235
Pricing:
- 800 6.67
- 1600 6.01
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 46A (Tc)
- Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 18V
- Power Dissipation (Max) 170W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 6.5mA
- Supplier Device Package D2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1473 pF @ 325 V