Inventory:2718
Pricing:
  • 800 18.04

Technical Details

  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 145A (Tc)
  • Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
  • Power Dissipation (Max) 500W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 25mA
  • Supplier Device Package D2PAK-7
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +22V, -8V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 4689 pF @ 325 V

Related Products


DIODE SIL CARB 650V 82A TO247-2

Inventory: 1356

SILICON CARBIDE (SIC) MOSFET - E

Inventory: 788

SILICON CARBIDE (SIC) MOSFET ELI

Inventory: 115

SILICON CARBIDE (SIC) MOSFET - 1

Inventory: 342

SIC MOS TO247-4L 750V

Inventory: 242

750V, 98A, 7-PIN SMD, TRENCH-STR

Inventory: 387

650V/30MOHM, SIC, STACKED FAST C

Inventory: 2668

750V/9MOHM, N-OFF SIC STACK CASC

Inventory: 1328

Top