- Product Model NTH4L075N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET - 5
- Classification Single FETs, MOSFETs
-
PDF
- 1 9.61
- 30 7.67
- 120 6.86
- 510 6.05
- 1020 5.45
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 38A (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 15A, 18V
- Power Dissipation (Max) 148W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1196 pF @ 325 V
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