- Product Model G60N06T
- Brand Goford Semiconductor
- RoHS Yes
- Description N60V, 50A,RD<17M@10V,VTH1.0V~2.0
- Classification Single FETs, MOSFETs
-
PDF
- 1 0.8
- 50 0.66
- 100 0.48
- 500 0.4
- 1000 0.34
- 2000 0.3
- 5000 0.29
- 10000 0.27
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Rds On (Max) @ Id, Vgs 17mOhm @ 5A, 10V
- Power Dissipation (Max) 85W (Tc)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 30 V
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