- Product Model G630J
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 200V 9A TO-251
- Classification Single FETs, MOSFETs
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Inventory:3500
Technical Details
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-251
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V