Inventory:1500
Pricing:
  • 1 17.18
  • 30 13.91
  • 120 13.09
  • 510 11.86

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 45A (Tc)
  • Rds On (Max) @ Id, Vgs 72mOhm @ 20A, 20V
  • Power Dissipation (Max) 208W (Tc)
  • Vgs(th) (Max) @ Id 3.2V @ 1mA
  • Supplier Device Package TO-247 Long Leads
  • Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
  • Vgs (Max) +20V, -5V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 400 V

Related Products


SICFET N-CH 650V 37A TO247-3

Inventory: 743

SICFET N-CH 700V 39A TO247-3

Inventory: 11

SICFET N-CH 650V 90A H2PAK-7

Inventory: 66

SICFET N-CH 650V 45A HIP247

Inventory: 0

SICFET N-CH 650V 90A HIP247

Inventory: 2

SILICON CARBIDE POWER MOSFET 120

Inventory: 600

SILICON CARBIDE POWER MOSFET 650

Inventory: 8

TRANS SJT N-CH 650V 119A HIP247

Inventory: 0

Top