Inventory:2243
Pricing:
  • 1 11.64
  • 30 9.76

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 37A (Tc)
  • Rds On (Max) @ Id, Vgs 79mOhm @ 13.2A, 15V
  • Power Dissipation (Max) 150W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 5mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +15V, -4V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 600 V

Related Products


IC ISOLATED MOD 16BIT 78K 8SOIC

Inventory: 0

SICFET N-CH 1200V 63A TO247-3

Inventory: 263

SICFET N-CH 650V 37A TO247-4L

Inventory: 136

SICFET N-CH 1200V 30A TO247-3

Inventory: 992

650V 120M SIC MOSFET

Inventory: 461

650V 120M SIC MOSFET

Inventory: 597

SILICON CARBIDE (SIC) MOSFET ELI

Inventory: 286

SIC MOS TO247-3L 650V

Inventory: 285

Top