- Product Model SCTWA60N120G2-4
- Brand STMicroelectronics
- RoHS Yes
- Description SILICON CARBIDE POWER MOSFET 120
- Classification Single FETs, MOSFETs
-
PDF
- 1 31.6
- 10 29.14
- 30 27.83
- 120 24.89
- 270 23.74
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
- Power Dissipation (Max) 388W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 94 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
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