- Product Model SCTW90N65G2V
- Brand STMicroelectronics
- RoHS Yes
- Description SICFET N-CH 650V 90A HIP247
- Classification Single FETs, MOSFETs
-
PDF
- 1 34.91
- 30 28.94
- 120 27.13
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V
- Power Dissipation (Max) 390W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package HiP247™
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
Related Products
SIC MOS TO247-3L 650V
Inventory: 178
650V, 118A, THD, TRENCH-STRUCTUR
Inventory: 441
SICFET N-CH 650V 93A TO247N
Inventory: 1493
SICFET N-CH 650V 90A H2PAK-7
Inventory: 66
SILICON CARBIDE POWER MOSFET 650
Inventory: 2740
SICFET N-CH 650V 45A HIP247
Inventory: 0
SICFET N-CH 650V 45A HIP247
Inventory: 0
TRANS SJT N-CH 650V 45A TO247
Inventory: 0
SILICON CARBIDE POWER MOSFET 120
Inventory: 600
SILICON CARBIDE POWER MOSFET 650
Inventory: 8
