- Product Model IMZ120R140M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 19A TO247-4
- Classification Single FETs, MOSFETs
-
PDF
- 1 10.42
- 30 8.32
- 120 7.44
- 510 6.56
- 1020 5.91
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 182mOhm @ 6A, 18V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 2.5mA
- Supplier Device Package PG-TO247-4-1
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 800 V
Related Products
SICFET N-CH 1200V 30A D2PAK-7
Inventory: 5562
SICFET N-CH 1.2KV 36A TO263
Inventory: 1902
SICFET N-CH 1.2KV 26A TO263
Inventory: 1656
SICFET N-CH 1.2KV 13A TO263
Inventory: 988
SICFET N-CH 1.2KV 13A TO247-3
Inventory: 1266
SICFET N-CH 1.2KV 4.7A TO247-3
Inventory: 1363
SIC DISCRETE
Inventory: 274
SICFET N-CH 1.2KV 26A TO247-4
Inventory: 592
SICFET N-CH 1.2KV 13A TO247-4
Inventory: 339
SICFET N-CH 1200V 17.3A TO247
Inventory: 413
