- Product Model IMZ120R090M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 26A TO247-4
- Classification Single FETs, MOSFETs
-
PDF
- 1 11.21
- 30 9.08
- 120 8.54
- 510 7.74
- 1020 7.1
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
- Power Dissipation (Max) 115W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 3.7mA
- Supplier Device Package PG-TO247-4-1
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
Related Products
SICFET N-CH 1.2KV 56A TO263
Inventory: 705
SICFET N-CH 1.2KV 26A TO263
Inventory: 1656
SICFET N-CH 1.2KV 18A TO263
Inventory: 186
SICFET N-CH 1.2KV 26A TO247-3
Inventory: 420
SICFET N-CH 1.2KV 36A TO247-4
Inventory: 261
SICFET N-CH 1.2KV 13A TO247-4
Inventory: 339
SIC DISCRETE
Inventory: 7
SILICON CARBIDE POWER MOSFET 120
Inventory: 600
