- Product Model IMZ120R220M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 13A TO247-4
- Classification Single FETs, MOSFETs
-
PDF
- 1 5.46
- 30 4.36
- 120 4.04
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 220mOhm @ 4A, 18V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 1.6mA
- Supplier Device Package PG-TO247-4-1
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 289 pF @ 800 V
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