Inventory:1913
Pricing:
  • 1 11.17
  • 34 9.05
  • 102 8.51
  • 510 7.72
  • 1020 7.08

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 17.3A (Tc)
  • Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
  • Power Dissipation (Max) 111W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 2.5mA
  • Supplier Device Package TO-247-4L
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25V, -15V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V
  • Qualification AEC-Q101

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