- Product Model NTBG1000N170M1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET EL
- Categories Single FETs, MOSFETs
- In Stock 2153
- 800 2.71
- 1600 2.32
- 2400 2.19
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
- Rds On (Max) @ Id, Vgs 1.43Ohm @ 2A, 20V
- Power Dissipation (Max) 51W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 640µA
- Supplier Device Package D2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -15V
- Drain to Source Voltage (Vdss) 1700 V
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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