- Product Model G2R1000MT17D
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description SIC MOSFET N-CH 4A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 10203
- 1 5.44
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
- Power Dissipation (Max) 44W (Tc)
- Vgs(th) (Max) @ Id 5.5V @ 500µA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 1700 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 111 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET N-CH 1500V 4A TO3P
In Stock: 18769
- 1: 9.28
- 30: 7.41
- 120: 6.63
- 510: 5.85
- 1020: 5.26
- 2010: 4.93
SICFET N-CH 1700V 4.9A TO247-3
In Stock: 2169
- 1: 11.37
- 30: 9.08
- 120: 8.12
- 510: 7.17
- 1020: 6.45
SIC MOSFET N-CH 4A TO263-7
In Stock: 4966
- 1: 18.69
MOSFET N-CH 2500V 200MA TO247
In Stock: 3282
- 1: 17.68
- 30: 14.32
- 120: 13.47
- 510: 12.21
SICFET N-CH 1700V 7A TO247-3
In Stock: 1732
- 1: 5.44
TRANS SJT 1700V TO247-4
In Stock: 1710
- 1: 5.61
PBSS5350TH/SOT23/TO-236AB
In Stock: 7553
- 3000: 0.11
- 6000: 0.11
- 9000: 0.1
- 30000: 0.09
- 75000: 0.09
MOSFET N-CHANNEL 800V 2A IPAK
In Stock: 1500
- 1: 1.2
- 75: 0.97
- 150: 0.77
- 525: 0.65
- 1050: 0.53
- 2025: 0.5
- 5025: 0.47
- 10050: 0.45
GANFET N-CH 600V 17A TO220AB
In Stock: 1541
- 1: 10.34
- 50: 8.25
- 100: 7.38
- 500: 6.51
- 1000: 5.86
