- Product Model G3R350MT12D
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description SIC MOSFET N-CH 11A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 10023
- 1 4.74
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 420mOhm @ 4A, 15V
- Power Dissipation (Max) 74W (Tc)
- Vgs(th) (Max) @ Id 2.69V @ 2mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) ±15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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