- Product Model G2R1000MT17J
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description SIC MOSFET N-CH 3A TO263-7
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 14024
- 1 6.44
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
- Power Dissipation (Max) 54W (Tc)
- Vgs(th) (Max) @ Id 4V @ 2mA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +20V, -10V
- Drain to Source Voltage (Vdss) 1700 V
- Input Capacitance (Ciss) (Max) @ Vds 139 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
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