Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Operating Temperature 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 204A (Tc)
• Power Dissipation (Max) 1360W (Tc)
• Vgs(th) (Max) @ Id 4V @ 35.2mA
• Supplier Device Package Module
• Vgs (Max) +22V, -6V
• Drain to Source Voltage (Vdss) 1200 V
• Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 10 V