Inventory:1504

Technical Details

  • Package / Case Module
  • Mounting Type Chassis Mount
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 300A (Tc)
  • Power Dissipation (Max) 1360W (Tc)
  • Vgs(th) (Max) @ Id 5.6V @ 80mA
  • Supplier Device Package Module
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V

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