- Product Model BSM180C12P3C202
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 1200V 180A MODULE
- Categories Single FETs, MOSFETs
- In Stock 1510
- 1 528.72
- 12 508.85
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Power Dissipation (Max) 880W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 50mA
- Supplier Device Package Module
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 1200 V
- Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
1200V, 134A, CHOPPER, SILICON-CA
In Stock: 1507
- 1: 383.65
- 12: 369.22
SICFET N-CH 1200V 400A MODULE
In Stock: 1504
- 1: 953.72
SICFET N-CH 1200V 600A MODULE
In Stock: 1500
- 4: 1250.79
1200V 12M TO-247-4 G3R SIC MOSFE
In Stock: 1904
- 1: 62.01
SIC MOSFET N-CH 128A TO247-4
In Stock: 2585
- 1: 36.09
SIC MOSFET N-CH 124A TO247-4
In Stock: 2799
- 1: 107.2
SIC DISCRETE
In Stock: 1728
- 1: 36.33
- 30: 30.12
- 120: 28.24
