- Product Model BSM180C12P3C202
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 1200V 180A MODULE
- Classification Single FETs, MOSFETs
- 1 528.72
- 12 508.85
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Power Dissipation (Max) 880W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 50mA
- Supplier Device Package Module
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 1200 V
- Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
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